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| PD - 97066 IRF7907PBF HEXFET(R) Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free VDSS 30V RDS(on) max Q1 16.4m:@VGS = 10V Q2 11.8m:@VGS = 10V 8 7 6 5 D2 D2 D1 D1 ID 9.1A 11A S2 G2 S1 G1 1 2 3 4 SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 9.1 7.3 76 2.0 1.3 0.016 -55 to + 150 Q1 Max. 30 20 Q2 Max. Units V 11 8.8 85 2.0 1.3 0.016 W/C C W A Thermal Resistance RJL RJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 20 62.5 Q2 Max. 20 62.5 Units C/W www.irf.com 1 1/4/06 IRF7907PBF BVDSS VDSS/TJ Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Q1&Q2 Q1 Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. 30 --- --- --- --- --- --- 1.35 --- --- --- --- --- --- 19 24 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.024 0.024 13.7 17.1 9.8 11.5 1.8 -4.6 -4.9 --- --- --- --- --- --- 6.7 14 1.3 3.0 0.7 1.3 2.5 4.9 2.2 4.8 3.2 6.2 4.5 9.0 2.6 3.0 6.0 8.0 9.3 14 8.0 13 3.4 5.3 850 1790 190 390 88 190 Max. --- --- --- 16.4 20.5 11.8 13.7 2.35 --- --- 1.0 150 100 -100 --- --- 10 21 --- --- --- --- --- --- --- --- --- --- --- --- 4.7 5.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- Min. --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- --- --- 12 16 4.1 5.9 Max. 2.8 2.8 76 85 1.0 1.0 18 24 6.1 8.9 Conditions Units VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 9.1A VGS = 4.5V, ID = 7.3A VGS = 10V, ID = 11A VGS = 4.5V, ID = 8.8A Q1: VDS = VGS, ID = 25A V mV/C Q2: VDS = VGS, ID = 50A m A nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 7.0A VDS = 15V, ID = 8.8A RDS(on) Static Drain-to-Source On-Resistance e e e e nC Q1 VDS = 15V VGS = 4.5V, ID = 7.0A Q2 VDS = 15V VGS = 4.5V, ID = 8.8A nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Q1 VDD = 15V, VGS = 4.5V ID = 7.0A ns Q2 VDD = 15V, VGS = 4.5V ID = 8.8A Clamped Inductive Load VGS = 0V VDS = 15V = 1.0MHz pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Q1 Max. 10 7.0 Q2 Max. 15 8.8 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Units Conditions A MOSFET symbol showing the A integral reverse p-n junction diode. TJ = 25C, IS = 7.3A, VGS = 0V V TJ = 25C, IS = 8.8A, VGS = 0V Q1 TJ = 25C, IF = 7.0A, ns VDD = 15V, di/dt = 100A/s nC Q2 TJ = 25C, IF = 8.8A, VDD = 15V, di/dt = 100A/s e e e e 2 www.irf.com Typical Characteristics Q1 - Control FET 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V IRF7907PBF Q2 - Synchronous FET 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM 1 1 0.1 2.3V 60s PULSE WIDTH Tj = 25C 0.1 2.3V 0.01 60s PULSE WIDTH Tj = 25C 10 100 0.01 0.1 1 10 100 0.1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V Fig 2. Typical Output Characteristics 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) BOTTOM ID, Drain-to-Source Current (A) BOTTOM 10 10 2.3V 1 0.1 1 60s PULSE WIDTH Tj = 150C 10 100 2.3V 1 0.1 1 60s PULSE WIDTH Tj = 150C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 100.0 100.0 Fig 4. Typical Output Characteristics ID, Drain-to-Source Current() 10.0 ID, Drain-to-Source Current() TJ = 150C 10.0 TJ = 150C 1.0 TJ = 25C VDS = 15V 1.0 TJ = 25C VDS = 15V 60s PULSE WIDTH 0.1 1.0 2.0 3.0 4.0 5.0 0.1 1.0 2.0 60s PULSE WIDTH 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Transfer Characteristics www.irf.com 3 IRF7907PBF Q1 - Control FET 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Typical Characteristics Q2 - Synchronous FET 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 Ciss C, Capacitance (pF) Ciss 1000 Coss 100 Crss Coss Crss 10 1 10 100 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 12 VGS, Gate-to-Source Voltage (V) 12 VGS, Gate-to-Source Voltage (V) ID= 7.0A VDS = 24V 10 8 6 4 2 0 0 4 VDS= 15V VDS= 6.0V 10 8 6 4 2 0 ID= 8.8A VDS = 24V VDS= 15V VDS= 6.0V 8 12 16 0 5 10 15 20 25 30 QG Total Gate Charge (nC) QG Total Gate Charge (nC) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) OPERATION IN THIS AREA LIMITED BY R DS (on) 100sec 100 1msec 100 1msec 10 100sec 10 1 10msec TA = 25C Tj = 150C Single Pulse 0.1 1 100msec 1 10msec TA = 25C Tj = 150C Single Pulse 0.1 1 100msec 0.1 0.1 0.01 10 100 VDS , Drain-to-Source Voltage (V) 0.01 10 100 VDS , Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www.irf.com Typical Characteristics Q1 - Control FET RDS(on) , Drain-to-Source On Resistance IRF7907PBF Q2 - Synchronous FET 1.5 ID = 9.1A RDS(on) , Drain-to-Source On Resistance 1.5 ID = 11A VGS = 10V VGS = 10V (Normalized) (Normalized) 1.0 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 Fig 13. Normalized On-Resistance vs. Temperature 100.0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) Fig 14. Normalized On-Resistance vs. Temperature 100.0 ISD , Reverse Drain Current (A) ISD , Reverse Drain Current (A) 10.0 TJ = 150C TJ = 150C 10.0 1.0 1.0 TJ = 25C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ = 25C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage m RDS (on), Drain-to -Source On Resistance ( ) 40 Fig 16. Typical Source-Drain Diode Forward Voltage m RDS (on), Drain-to -Source On Resistance ( ) 40 ID = 8.8A ID = 11A 30 30 20 TJ = 125C 20 TJ = 125C 10 TJ = 25C TJ = 25C 10 2 4 6 8 10 0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance vs.Gate Voltage Fig 18. Typical On-Resistance vs.Gate Voltage www.irf.com 5 IRF7907PBF Q1 - Control FET 10 Typical Characteristics Q2 - Synchronous FET 12 8 10 ID, Drain Current (A) ID, Drain Current (A) 8 6 6 4 4 2 2 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TJ, Ambient Temperature (C) TJ, Ambient Temperature (C) Fig 19. Maximum Drain Current vs. Ambient Temp. 2.2 Fig 20. Maximum Drain Current vs. Ambient Temp. 2.2 VGS(th, Gate threshold Voltage (V) 2.0 VGS(th, Gate threshold Voltage (V) 2.0 1.8 ID = 250A 1.8 ID = 250A 1.6 1.6 1.4 1.4 1.2 1.2 1.0 -75 -50 -25 0 25 50 75 100 125 150 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Temperature ( C ) TJ, Temperature ( C ) Fig 21. Threshold Voltage vs. Temperature 50 Fig 22. Threshold Voltage vs. Temperature 60 EAS, Single Pulse Avalanche Energy (mJ) EAS, Single Pulse Avalanche Energy (mJ) 40 3.0A 3.5A BOTTOM 7.0A TOP ID 50 ID 3.8A 4.4A BOTTOM 8.8A TOP 40 30 30 20 20 10 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Starting TJ, Junction Temperature (C) Fig 23. Maximum Avalanche Energy vs. Drain Current Fig 24. Maximum Avalanche Energy vs. Drain Current 6 www.irf.com IRF7907PBF 100 D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 0.02 0.01 R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 a 1 2 3 4 4 1 J 0.1 Ci= i/Ri Ci i/Ri Ri (C/W) (sec) 2.288789 0.000137 7.167906 0.014957 36.98193 0.72461 16.07333 26.8 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Ta 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1) 100 D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 0.02 0.01 R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 a 1 2 3 4 4 1 J 0.1 Ci= i/Ri Ci i/Ri Ri (C/W) (sec) 1.848416 0.000164 11.29818 0.054158 34.97452 0.9598 14.3858 38.2 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Ta 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2) L S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 Co Vo GND Cin Vin Fig 27. Layout Diagram www.irf.com 7 IRF7907PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01 I AS Fig 29a. Unclamped Inductive Test Circuit Fig 29b. Unclamped Inductive Waveforms 15V 90% VDS L VDS DRIVER RG 20V D.U.T IAS tp 10% + V - DD A VGS td(on) tr td(off) tf 0.01 Fig 30a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. Fig 30b. Switching Time Waveforms Id Vds Vgs 50K 12V .2F .3F VGS -3mA IG ID Current Sampling Resistors Fig 31a. Gate Charge Test Circuit 8 + D.U.T. - VDS Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 31b. Gate Charge Waveform www.irf.com IRF7907PBF SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 9 IRF7907PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, Q1: L = 0.41mH, RG = 25, IAS = 7.0A; Q2: L = 0.38mH, RG = 25, IAS = 8.8A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ approximately 90C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/06 10 www.irf.com |
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